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PTB 20091

Features: 30 Watts (P-Sync), 470860 MHz Class A Characteristics Silicon Nitride Passivated Gold Metallization Excellent LinearitySpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 30 Vdc Collector-Base Voltage VCBO 65 Vdc E...

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PTB 20091: Features: 30 Watts (P-Sync), 470860 MHz Class A Characteristics Silicon Nitride Passivated Gold Metallization Excellent LinearitySpecifications Parameter Symbol Rating Unit Co...

PTB 20091 Data Sheet

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Part Number:
PTB 20091
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

30 Watts (P-Sync), 470860 MHz
Class A Characteristics
Silicon Nitride Passivated
Gold Metallization
Excellent Linearity


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

30

 Vdc

Collector-Base Voltage

 VCBO

65

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

6.7

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

150

1.33

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 .75

°C/W




Description

The PTB 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. PTB 20091 is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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