Features: 10 Watts Linear Power Output Power at 1 dB Compressed = 15 W Class AB Characteristics 30% Collector Efficiency at 7.5 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc ...
PTB 20082: Features: 10 Watts Linear Power Output Power at 1 dB Compressed = 15 W Class AB Characteristics 30% Collector Efficiency at 7.5 Watts Gold Metallization Silicon Nitride PassivatedSpecifications ...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
50 |
Vdc |
Collector-Base Voltage |
VCBO |
50 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
1.4 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
25 0.29 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
3.4 |
°C/W |
The PTB 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, PTB 20082 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.