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PTB 20081

Features: 150 Watts (P-Sync), 470860 MHz Class AB Characteristics 55% Collector Efficiency at 100 Watts (CW) Guaranteed Performance at 28 Volts, 860 MHz - Output Power = 125 Watts (Peak Sync) - Output Power = 100 Watts (CW) - Minimum Gain = 8.5 dB Guaranteed Performance at 32 Volts, 860 MHz - Outp...

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PTB 20081: Features: 150 Watts (P-Sync), 470860 MHz Class AB Characteristics 55% Collector Efficiency at 100 Watts (CW) Guaranteed Performance at 28 Volts, 860 MHz - Output Power = 125 Watts (Peak Sync) - Outp...

PTB 20081 Data Sheet

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Part Number:
PTB 20081
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

150 Watts (P-Sync), 470860 MHz
Class AB Characteristics
55% Collector Efficiency at 100 Watts (CW)
Guaranteed Performance at 28 Volts, 860 MHz
    - Output Power = 125 Watts (Peak Sync)
    - Output Power = 100 Watts (CW)
    - Minimum Gain = 8.5 dB
Guaranteed Performance at 32 Volts, 860 MHz
    - Output Power = 150 Watts (Peak Sync)


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

65

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

12

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

233

1.33

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

0.75

°C/W




Description

The PTB 20081 is a class AB, NPN, common emitter RF power transistor intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF TV frequency band. PTB 20081 is rated at 100 watts minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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