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PTB 20080

Features: 25 Watts, 1.61.7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 V...

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PTB 20080: Features: 25 Watts, 1.61.7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Uni...

PTB 20080 Data Sheet

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Part Number:
PTB 20080
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

25 Watts, 1.61.7 GHz
Class AB Characteristics
40% Collector Efficiency at 25 Watts
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

50

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

3.4

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

123

0.7

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

1.43

°C/W




Description

ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. PTB 20080 is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.




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