PTB 20079

Features: 10 Watts, 1.61.7 GHz Class A/AB Characteristics 38% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 ...

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PTB 20079 Picture
SeekIC No. : 004466712 Detail

PTB 20079: Features: 10 Watts, 1.61.7 GHz Class A/AB Characteristics 38% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating U...

floor Price/Ceiling Price

Part Number:
PTB 20079
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

10 Watts, 1.61.7 GHz
Class A/AB Characteristics
38% Collector Efficiency at 10 Watts
Gold Metallization
Silicon Nitride Passivated



Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

1.4

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

52

0.29

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

3.4

°C/W




Description

The PTB 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. PTB 20079 is rated at 10 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.




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