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PTB 20078

Features: 2.5 Watts, 15251660 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and ReelSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 55 Vdc Collector-Base Voltage VCBO...

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SeekIC No. : 004466711 Detail

PTB 20078: Features: 2.5 Watts, 15251660 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and ReelSpecifications Parameter Symbol Ra...

PTB 20078 Data Sheet

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Part Number:
PTB 20078
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

2.5 Watts, 15251660 MHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

55

 Vdc

Collector-Base Voltage

 VCBO

55

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

0.5

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

10

0.057

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

17.5

°C/W




Description

The PTB 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, PTB 20078 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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