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PTB 20077

Features: • 0.7 Watt, 15251660 MHz• Class A Characteristics• Gold Metallization• Silicon Nitride Passivated• Surface Mountable• Available in Tape and ReelSpecifications Parameter Symbol Rating Unit Collector-emitter voltage ...

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SeekIC No. : 004466710 Detail

PTB 20077: Features: • 0.7 Watt, 15251660 MHz• Class A Characteristics• Gold Metallization• Silicon Nitride Passivated• Surface Mountable• Available in Tape and ReelSpecific...

PTB 20077 Data Sheet

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Part Number:
PTB 20077
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 0.7 Watt, 15251660 MHz
• Class A Characteristics
• Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

60

 Vdc

Collector-Base Voltage

 VCBO

60

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

0.5

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

5.4

0.031

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

32.3

°C/W




Description

The PTB 20077 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 0.7 watt minimum output power, PTB 20077 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.




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