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PTB 20074

Features: 14 watts, 1.4771.501 GHz Class AB Characteristics 30% Collector Efficiency at 10 watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 ...

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PTB 20074: Features: 14 watts, 1.4771.501 GHz Class AB Characteristics 30% Collector Efficiency at 10 watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating ...

PTB 20074 Data Sheet

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Part Number:
PTB 20074
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

14 watts, 1.4771.501 GHz
Class AB Characteristics
30% Collector Efficiency at 10 watts
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

50

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

1.4

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

25

0.14

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

7.0

°C/W




Description

The PTB 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, PTB 20074 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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