Features: 60 Watts, 860900 MHz Class AB Characteristics 50% Collector Efficiency at 60 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 65 V...
PTB 20053: Features: 60 Watts, 860900 MHz Class AB Characteristics 50% Collector Efficiency at 60 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Uni...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
40 |
Vdc |
Collector-Base Voltage |
VCBO |
65 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
8.0 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
145 0.83 |
Watts W/°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
1.2 |
°C/W |