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PTB 20051

Features: 6 Watts, 1.4651.513 GHz Class AB Characteristics 35% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 V...

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PTB 20051: Features: 6 Watts, 1.4651.513 GHz Class AB Characteristics 35% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Uni...

PTB 20051 Data Sheet

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Part Number:
PTB 20051
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

6 Watts, 1.4651.513 GHz
Class AB Characteristics
35% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

50

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

 4.0

Vdc

Collector Current (continuous)

 IC

0.7

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

28

0.16

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 6.2

°C/W




Description

The PTB 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, PTB 20051 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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