PTB 20046

Features: 1 Watt, 14651513 MHz Class AB Characteristics 18% Collector Efficiency at 1 Watt Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc Collector-Base Volta...

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PTB 20046 Picture
SeekIC No. : 004466706 Detail

PTB 20046: Features: 1 Watt, 14651513 MHz Class AB Characteristics 18% Collector Efficiency at 1 Watt Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating...

floor Price/Ceiling Price

Part Number:
PTB 20046
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

1 Watt, 14651513 MHz
Class AB Characteristics
18% Collector Efficiency at 1 Watt
Gold Metallization
Silicon Nitride Passivated



Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

50

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

0.7

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

10

0.057

Watts

W/°C

 Storage Temperature

 Tstg

150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

17.5

°C/W




Description

The PTB 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1 watt minimum output power, PTB 20046 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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