Features: 1 Watt, 14651513 MHz Class AB Characteristics 18% Collector Efficiency at 1 Watt Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 50 Vdc Collector-Base Volta...
PTB 20046: Features: 1 Watt, 14651513 MHz Class AB Characteristics 18% Collector Efficiency at 1 Watt Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating...
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Parameter |
Symbol |
Rating |
Unit |
Collector-emitter voltage |
VCER |
50 |
Vdc |
Collector-Base Voltage |
VCBO |
50 |
Vdc |
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
Collector Current (continuous) |
IC |
0.7 |
Adc |
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
10 0.057 |
Watts W/°C |
Storage Temperature |
Tstg |
150 |
°C |
Thermal Resistance (Tflange = 70° C) |
RqJC |
17.5 |
°C/W |
The PTB 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1 watt minimum output power, PTB 20046 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.