PTB 20030 Selling Leads, Price trend, PTB 20030 DataSheet download, circuit diagram from SeekIC.com

Features: 15 Watts, 420470 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 48 Vdc Collector-Base Voltage VCBO 50 V...

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SeekIC No. : 004466703 Detail

PTB 20030: Features: 15 Watts, 420470 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Uni...

PTB 20030 Data Sheet

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Part Number:: PTB 20030
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

15 Watts, 420470 MHz
Class AB Characteristics
50% Collector Efficiency at 15 Watts
Gold Metallization
Silicon Nitride Passivated

Specifications

Parameter	Symbol	Rating	Unit
Collector-emitter voltage	V_CER	48	V_dc
Collector-Base Voltage	V_CBO	50	V_dc
Emitter-Base Voltage (collector open)	V_EBO	4.0	V_dc
Collector Current (continuous)	I_C	6.0	A_dc
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by	P_D	63 0.30	Watts W/°C
Storage Temperature Range	T_stg	40 to +150	°C
Thermal Resistance (Tflange = 70° C)	R_qJC	2.8	°C/W

Description

The PTB 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, PTB 20030 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

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