PTB 20017 Selling Leads, Price trend, PTB 20017 DataSheet download, circuit diagram from SeekIC.com

Features: 150 Watts, 860900 MHz Class AB Characteristics 50% Collector Efficiency at 150 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base V...

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SeekIC No. : 004466702 Detail

PTB 20017: Features: 150 Watts, 860900 MHz Class AB Characteristics 50% Collector Efficiency at 150 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Ra...

PTB 20017 Data Sheet

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Part Number:: PTB 20017
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

150 Watts, 860900 MHz
Class AB Characteristics
50% Collector Efficiency at 150 Watts
Gold Metallization
Silicon Nitride Passivated

Specifications

Parameter	Symbol	Rating	Unit
Collector-emitter voltage	V_CER	40	V_dc
Collector-Base Voltage	V_CBO	60	V_dc
Emitter-Base Voltage (collector open)	V_EBO	4.0	V_dc
Collector Current (continuous)	I_C	25	A_dc
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by	P_D	330 1.89	Watts W/°C
Storage Temperature Range	T_stg	40 to +150	°C
Thermal Resistance (Tflange = 70° C)	R_qJC	0.53	°C/W

Description

The PTB 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, PTB 20017 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

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