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PTB 20008

Features: 10 Watts, 935960 MHz Class AB Characteristics 50% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 V...

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PTB 20008: Features: 10 Watts, 935960 MHz Class AB Characteristics 50% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Uni...

PTB 20008 Data Sheet

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Part Number:
PTB 20008
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

10 Watts, 935960 MHz
Class AB Characteristics
50% Collector Efficiency at 10 Watts
Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

6.7

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

65

0.4

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

2.7

°C/W




Description

The PTB 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, PTB 20008 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.




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