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PS2733-4

Features: • HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN• HIGH COLLECTOR TO EMITTER VOLTAGE VCEO: 300 V MIN: PS2732-1,-2,-4 VCEO: 350 V MIN: PS2733-1,-2,-4• SOP (SMALL OUT-LINE PACKAGE)• ULTRA HIGH CURRENT TRANSFER RATIO CTR: 4000% TYP• TAPING PRODUCT NUMBER (Only -1 ...

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PS2733-4: Features: • HIGH ISOLATION VOLTAGE BV: 2.5 k Vr.m.s. MIN• HIGH COLLECTOR TO EMITTER VOLTAGE VCEO: 300 V MIN: PS2732-1,-2,-4 VCEO: 350 V MIN: PS2733-1,-2,-4• SOP (SMALL OUT-LINE PAC...

PS2733-4 Data Sheet

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Part Number:
PS2733-4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• HIGH ISOLATION VOLTAGE
   BV: 2.5 k Vr.m.s. MIN
• HIGH COLLECTOR TO EMITTER VOLTAGE
   VCEO: 300 V MIN: PS2732-1,-2,-4
   VCEO: 350 V MIN: PS2733-1,-2,-4
• SOP (SMALL OUT-LINE PACKAGE)
• ULTRA HIGH CURRENT TRANSFER RATIO
   CTR: 4000% TYP
• TAPING PRODUCT NUMBER (Only -1 Type)
   PS2732-1-E3, F3
   PS2733-1-E3, F3


Application

Interface circuit for various instrumentations and control equipment.
• REPLACEMENT FOR RELAY IN PULSE-DIAL CIRCUIT
• HIGH CTR CIRCUIT APPLICATIONS


Specifications

Parameter
Symbol
Ratings
Unit
PS2732-1
PS2733-1
PS2732-2,-4 PS27333-2,-4
Diode Reverse Voltage
VR
6
V
Forward Current (DC)
IF
50
mA
Reverse Voltage
VR
6
V
Power Dissipation
PD
80
mW/ch
Peak Forward Current
(PW = 100 s, Duty Cycle 1%)
IF(PEAK)
1
A
Transistor Collector to Emitter Voltage
(IC = ImA, IB = 0)
VCEO
300/350
V

Emitter to Collector Voltage
(IE = 100A, IB = 0)
VEBO
6
V
Collector Current
IC
150
mW/ch
Power Dissipation
PC
150
120
mW/ch
Coupled Isolation Voltage*2
BV
2500
Vr.m.s.
Operating Temperature
TOP
55 to +100
°C
Storage Temperature
Tstg
55 to +150
°C
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and ouput.


Description

The PS2732 and PS2733-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. Each is mounted in a plastic SOP (Small Out-line Package) for high density applications.




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