PS2732-1

Input Type :
Maximum Collector Emitter Voltage :
Maximum Collector Emitter Saturation Voltage :
Isolation Voltage :
Current Transfer Ratio :
Maximum Forward Diode Voltage :
Maximum Collector Current :
Maximum Power Dissipation :
Maximum Operating Temperature :
Minimum Operating Temperature :
Package / Case :
Packaging : Tube


Features:

• HIGH ISOLATION VOLTAGE
   BV: 2.5 k Vr.m.s. MIN
• HIGH COLLECTOR TO EMITTER VOLTAGE
   V_CEO: 300 V MIN: PS2732-1,-2,-4
   V_CEO: 350 V MIN: PS2733-1,-2,-4
• SOP (SMALL OUT-LINE PACKAGE)
• ULTRA HIGH CURRENT TRANSFER RATIO
   CTR: 4000% TYP
• TAPING PRODUCT NUMBER (Only -1 Type)
   PS2732-1-E3, F3
   PS2733-1-E3, F3


Application

Interface circuit for various instrumentations and control equipment.
• REPLACEMENT FOR RELAY IN PULSE-DIAL CIRCUIT
• HIGH CTR CIRCUIT APPLICATIONS


Specifications

Parameter		Symbol	Ratings		Unit
			PS2732-1 PS2733-1	PS2732-2,-4 PS27333-2,-4
Diode	Reverse Voltage	VR	6		V
	Forward Current (DC)	IF	50		mA
	Reverse Voltage	VR	6		V
	Power Dissipation	PD	80		mW/ch
	Peak Forward Current (PW = 100 s, Duty Cycle 1%)	IF(PEAK)	1		A
Transistor	Collector to Emitter Voltage (IC = ImA, IB = 0)	VCEO	300/350		V
	Emitter to Collector Voltage (IE = 100A, IB = 0)	VEBO	6		V
	Collector Current	IC	150		mW/ch
	Power Dissipation	PC	150	120	mW/ch
Coupled	Isolation Voltage*2	BV	2500		Vr.m.s.
	Operating Temperature	TOP	55 to +100		°C
	Storage Temperature	Tstg	55 to +150		°C

Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. AC voltage for 1 minute at T_A = 25 °C, RH = 60 % between input and ouput.


Description

The PS2732-1 and PS2733 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. Each is mounted in a plastic SOP (Small Out-line Package) for high density applications.