PS2711-1-F3

The PS2711-1-F3 is designed as an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications.

PS2711-1-F3 has four features. (1)High current transfer ratio (CTR=200% typ at If=1mA). (2)High isolation voltage (BV=3750Vrms). (3)Small and thin package (4-pin SOP). (4)UL approved: file No. E72422(S). Those are all the main fetaures.

Some PS2711-1-F3 absolute maximum ratings have been concluded into several points as follow. (1)Its forward current DC would be 50mA. (2)Its reverse voltage would be 6V. (3)Its diode power dissipation derating would be 0.8mW/°C. (4)Its diode power dissipation would be 80mW. (5)Its peak forward current would be 0.5A. (6)Its collector to emitter voltage would be 40V. (7)Its emitter to collector voltage would be 5V. (8)Its collector current would be 40mA. (9)Its transistor power dissipaion derating would be 1.5mW/°C. (10)Its power dissipation would be 150mW. (11)Its isolation voltage would be 3750Vrms. (12)Its operating ambient temperature range would be from -55°C to 100°C. (13)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some PS2711-1-F3 electrical characteristics are concluded as follow. (1)Its forward voltage would be typ 1.15V and max 1.4V. (2)Its reverse current would be max 5uA. (3)Its terminal capacitance would be typ 30pF. (4)Its collector to emitter dark current would be max 100nA. (5)Its current transfer ratio would be min 100% and typ 200% and max 400%. (6)Its collector saturation voltage would be max 0.3V. (7)Its isolation resistance would be min 10^11ohms. (8)Its isolation capacitance would be typ 0.4pF. (9)Its rise time would be typ 4us. (10)Its fall time would be typ 5us. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!