PS2702

DescriptionThe PS2702 is optically coupled isolators consisting of a GaAs light emitting diode and an NPN silicon darlington-con nected phototransistor.Each is mounted in a plastic SOP (Small Out-line Package) for high density applications.This package has shield effect to cut off ambient light. ...

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SeekIC No. : 004465537 Detail

PS2702: DescriptionThe PS2702 is optically coupled isolators consisting of a GaAs light emitting diode and an NPN silicon darlington-con nected phototransistor.Each is mounted in a plastic SOP (Small Out-li...

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Part Number:
PS2702
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Description

The PS2702 is optically coupled isolators consisting of a GaAs light emitting diode and an NPN silicon darlington-con nected phototransistor.Each is mounted in a plastic SOP (Small Out-line Package) for high density applications.This package has shield effect to cut off ambient light.

Features of the PS2702 are:(1)high current transfer ratio (CTR = 2 000 % TYP.);(2)high isolation voltage (BV = 3 750 Vr.m.s.);(3)small and thin (SOP) package;(4)high-speed switching (tr, tf = 200 ms TYP.);(5)ordering number of taping product (1-ch only): PS2702-1-E3, E4, F3, F4;(6)UL approved: file No. E72422;(7)VDE0884 approved (Option).

The absolute maximum ratings and electrical characteristics(TA = 25°C) of the PS2702 can be summarized as:(1): diode: forward current (DC) is 50 mA,reverse voltage is 6.0 V,power dissipation derating is 0.8 mW/°C,power diss ipation is 80 mW/ch,peak forward current is 1 A;(2):transistor: collector to emitter voltage is 40 V,mitter to collector voltage is 6 V,collector current is 200 mA/ch,power dissipation derating is 1.5 mW/°C,power dissipation is 150 mW/ ch;(3):isolation voltage is 3 750 Vr.m.s;(4):operating ambient temperature is from 55°C to +100 °C;(5):storage temperature is55°C to +150 °C.electrical characteristics:(1)diode: forward voltage is 1.1V min and 1.4V max wh en IF is 5 mA,reverse current is 5 uA when VR is 5 V,terminal capacitance is 30 pF typ when V is 0 V and f is 1 MHz;(2)transistor: collector to emitter current is 400 nA max when IF is 0 mA and VCE is 40 V ;(3)coupled:current transfer ratio is 200% min and 2000% typ when IF is 1 mA and VCE is 2 V, collector saturation voltage is 1.0 V max when IF is 1 mA and IC is 2 mA, isolation resistance is 10 W min when VI-O is 1 kVDC,isolation capacitance is 0.4 pF typ when V is 0 V and f is 1 MHz.




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