PN3644

Maximum DC Collector Current :
Maximum Operating Temperature :
Configuration : Single
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 200 MHz
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 45 V
Packaging : Box
DC Collector/Base Gain hfe Min : 100 at 150 mA at 10 V


Description

The PN3644 is designed as one kind of PNP silicon planar epitaxial transistor device that can be use for small signal general purpose amplifiers and switches applications.The absolute maximum ratings of the PN3644 can be summarized as:(1)collector-base voltage: 45.0 V;(2)collector-emitter voltage: 45.0 V;(3)emitter=base voltage: 5.0 V;(4)collector current: 500 mA;(5)total power dissipation: 625 mW;(6)operating junction and storage temperature: -55 to +150.

The electrical characteristics of this device can be summarized as:(1)collector-base beakdown voltage: 25.0 V;(2)collector-emitter breakdown voltage: 25.0 V;(3)collector-emitter breakdown voltage: 25.0 V;(4)emitter-base breakdown voltage: 4.0 V;(5)collector cutoff current: 35 nA or 2 uA;(6)emitter cutoff current: 20 nA;(7)collector-emitter saturation voltage: 0.25 V;(8)base-emitter saturation voltage: 1.1 V. If you want to know more information about the PN3644, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	PN3644
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	800mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 2.5mA, 50mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	35nA
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PN3644 PN3644