PN3638

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.8 A
DC Collector/Base Gain hfe Min : 30
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk
Emitter- Base Voltage VEBO : 4.9 V


Description

The PN3638 is designed as one kind of PNP silicon AF low noise small signal transistor device that can be use for ultra high sped switching applications.The absolute maximum ratings of the PN3638 can be summarized as:(1)collector-base voltage: 25.0 V;(2)collector-emitter voltage: 25.0 V;(3)emitter=base voltage: 4.0 V;(4)collector current: 500 mA;(5)total power dissipation: 625 mW;(6)operating junction and storage temperature: -55 to +150.

The electrical characteristics of this device can be summarized as:(1)collector-base beakdown voltage: 25.0 V;(2)collector-emitter breakdown voltage: 25.0 V;(3)collector-emitter breakdown voltage: 25.0 V;(4)emitter-base breakdown voltage: 4.0 V;(5)collector cutoff current: 35 nA or 2 uA;(6)emitter cutoff current: 20 nA;(7)collector-emitter saturation voltage: 0.25 V;(8)base-emitter saturation voltage: 1.1 V. If you want to know more information about the PN3638, please download the datasheet in www.seekic.com or www.chinaicmart.com .