PN3639

The PN3639 is designed as one kind of PNP silicon AF low noise small signal transistor device that can be use for ultra high sped switching applications.The absolute maximum ratings of the PN3639 can be summarized as:(1)collector-base voltage: 6.0 V;(2)collector-emitter voltage: 6.0 V;(3)emitter=base voltage: 4.0 V;(4)collector current: 80 mA;(5)total power dissipation: 1.0 W;(6)operating junction and storage temperature: -65 to +150.

The electrical characteristics of this device can be summarized as:(1)collector-base beakdown voltage: 6.0 V;(2)collector-emitter breakdown voltage: 6.0 V;(3)collector-emitter breakdown voltage: 6.0 V;(4)emitter-base breakdown voltage: 4.0 V;(5)collector cutoff current: 10 nA or 3 uA;(6)emitter cutoff current: 20 nA;(7)collector-emitter saturation voltage: 0.25 V;(8)base-emitter saturation voltage: 0.9 V. If you want to know more information about the PN3639, please download the datasheet in www.seekic.com or www.chinaicmart.com .