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SeekIC No. : 003429800 Detail

PMWD30UN,518: MOSFET N-CH TRENCH DL 30V 8TSSOP

PMWD30UN,518 Data Sheet

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Part Number:: PMWD30UN,518
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Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Series:	TrenchMOS™	Manufacturer:	NXP Semiconductors
FET Type:	2 N-Channel (Dual)	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V	Current - Continuous Drain (Id) @ 25° C:	5A
Rds On (Max) @ Id, Vgs:	33 mOhm @ 3.5A, 4.5V	Vgs(th) (Max) @ Id:	700mV @ 1mA
Gate Charge (Qg) @ Vgs:	28nC @ 5V	Drain Current (Idss at Vgs=0) :	8 mA to 20 mA
Input Capacitance (Ciss) @ Vds:	1478pF @ 10V	Power - Max:	2.3W
Mounting Type:	Surface Mount	Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Power - Max: 2.3W
Current - Continuous Drain (Id) @ 25° C: 5A
Manufacturer: NXP Semiconductors
Series: TrenchMOS™
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 700mV @ 1mA
Gate Charge (Qg) @ Vgs: 28nC @ 5V
Input Capacitance (Ciss) @ Vds: 1478pF @ 10V
Rds On (Max) @ Id, Vgs: 33 mOhm @ 3.5A, 4.5V

Parameters:

Technical/Catalog Information	PMWD30UN,518
Vendor	NXP Semiconductors (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	33 mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1478pF @ 10V
Power - Max	2.3W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	28nC @ 5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Drawing Number	568; SOT530-1; PW, TT, DH, DP; 8
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PMWD30UN,518 PMWD30UN,518 568 2364 1 ND 56823641ND 568-2364-1

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