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PMWD30UN

Features: Surface mounting package Low profileVery low thresholdFast switching.ApplicationPortable appliances PCMCIA cardsBattery management Load switching.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 °C - 3...

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SeekIC No. : 004464261 Detail

PMWD30UN: Features: Surface mounting package Low profileVery low thresholdFast switching.ApplicationPortable appliances PCMCIA cardsBattery management Load switching.PinoutSpecifications Symbol Para...

PMWD30UN Data Sheet

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Part Number:
PMWD30UN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

Surface mounting package
Low profile
Very low threshold 
Fast switching.


Application

Portable appliances
PCMCIA cards
Battery management
Load switching.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - 30 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- 30 V
VGS gate-source voltage (DC)   - ±10 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V;
Figure 2 and 3		 - 5 A
Tsp = 100 °C; VGS = 4.5 V;
Figure 2		 - 3 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - 18 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 2.3 W
Tstg storage temperature   -55 +150 °C
Tj junction temperature   -55 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - 2 A
ISM peak source (diode forward) current Tsp = 25 °C;pulsed; tp 10s - 7 A



Description

Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PMWD30UN in SOT530-1 (TSSOP8).


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