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PMWD20XN,118

MOSFET N-CH TRENCH DL 20V 8TSSOP

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SeekIC No. : 003429896 Detail

PMWD20XN,118: MOSFET N-CH TRENCH DL 20V 8TSSOP

PMWD20XN,118 Data Sheet

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Part Number:
PMWD20XN,118
Mfg:
Supply Ability:
5000

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Product Details

Quick Details

Series: TrenchMOS™ Manufacturer: NXP Semiconductors
FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25° C: 10.4A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) @ Vgs: 11.6nC @ 4.5V Drain Current (Idss at Vgs=0) : 8 mA to 20 mA
Input Capacitance (Ciss) @ Vds: 740pF @ 16V Power - Max: 4.2W
Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP    

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) @ Vgs: 11.6nC @ 4.5V
Manufacturer: NXP Semiconductors
Series: TrenchMOS™
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 10.4A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.2A, 10V
Input Capacitance (Ciss) @ Vds: 740pF @ 16V
Power - Max: 4.2W


Parameters:

Technical/Catalog InformationPMWD20XN,118
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C10.4A
Rds On (Max) @ Id, Vgs22 mOhm @ 4.2A, 10V
Input Capacitance (Ciss) @ Vds 740pF @ 16V
Power - Max4.2W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs11.6nC @ 4.5V
Package / Case8-TSSOP
FET FeatureLogic Level Gate
Drawing Number568; SOT530-1; PW, TT, DH, DP; 8
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PMWD20XN,118
PMWD20XN,118
568 2362 1 ND
56823621ND
568-2362-1



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