PMWD19UN,518

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Power - Max: 2.3W
Manufacturer: NXP Semiconductors
Series: TrenchMOS™
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 5.6A
Vgs(th) (Max) @ Id: 700mV @ 1mA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.5A, 4.5V
Gate Charge (Qg) @ Vgs: 28nC @ 5V
Input Capacitance (Ciss) @ Vds: 1478pF @ 10V


Parameters:

Technical/Catalog Information	PMWD19UN,518
Vendor	NXP Semiconductors (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5.6A
Rds On (Max) @ Id, Vgs	23 mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1478pF @ 10V
Power - Max	2.3W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	28nC @ 5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Drawing Number	568; SOT530; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PMWD19UN,518 PMWD19UN,518 568 2361 6 ND 56823616ND 568-2361-6