Features: Low threshold voltage Low on-state resistance.ApplicationLow power DC-to-DC convertersBattery managementLoad switching Battery powered portable equipment.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 ...
PMV65XP: Features: Low threshold voltage Low on-state resistance.ApplicationLow power DC-to-DC convertersBattery managementLoad switching Battery powered portable equipment.PinoutSpecifications Symbol...
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Low threshold voltage
Low on-state resistance.
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C | - | -20 | V |
VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; |
- | -20 | V |
VGS | gate-source voltage (DC) | - | ±12 | V | |
ID | drain current (DC) | Tsp = 25 °C; VGS = -4.5 V; Figure 2 and 3 |
- | -3.9 | A |
Tsp = 100 °C; VGS = -4.5 V; Figure 2 |
- | -2.5 | A | ||
IDM | peak drain current | Tsp = 25 °C;pulsed; tp 10s; Figure 3 |
- | -15.9 | A |
Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 1.92 | W |
Tstg | storage temperature | -55 | +150 | °C | |
Tj | junction temperature | -55 | +150 | °C | |
Source-drain diode | |||||
IS | source (diode forward) current (DC) | Tsp = 25 °C | - | -1.6 | A |
ISM | peak source (diode forward) current | Tsp = 25 °C; pulsed; tp 10s | - | -6.4 | A |