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PMV65XP

Features: Low threshold voltage Low on-state resistance.ApplicationLow power DC-to-DC convertersBattery managementLoad switching Battery powered portable equipment.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 150 ...

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SeekIC No. : 004464253 Detail

PMV65XP: Features: Low threshold voltage Low on-state resistance.ApplicationLow power DC-to-DC convertersBattery managementLoad switching Battery powered portable equipment.PinoutSpecifications Symbol...

PMV65XP Data Sheet

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Part Number:
PMV65XP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low threshold voltage
Low on-state resistance.




Application

Low power DC-to-DC converters
Battery management
Load switching
Battery powered portable equipment.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS

drain-source voltage (DC)

 25 °C Tj 150 °C - -20 V
VDGR

drain-gate voltage (DC)

25 °C Tj 150 °C;
RGS =20k

- -20 V
VGS gate-source voltage (DC)   - ±12 V
ID drain current (DC) Tsp = 25 °C; VGS = -4.5 V;
Figure 2 and 3		 - -3.9 A
Tsp = 100 °C; VGS = -4.5 V;

Figure 2		 - -2.5 A
IDM peak drain current Tsp = 25 °C;pulsed; tp 10s;
Figure 3		 - -15.9 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 1.92 W
Tstg storage temperature   -55 +150 °C
Tj junction temperature   -55 +150 °C

Source-drain diode

IS source (diode forward) current (DC) Tsp = 25 °C - -1.6 A
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10s - -6.4 A



Description

PMV65XP P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.


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