MOSFET N-CH TRENCH 30V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.7 A | ||
Resistance Drain-Source RDS (on) : | 0.055 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-236AB | Packaging : | Reel |
Technical/Catalog Information | PMV60EN,215 |
Vendor | NXP Semiconductors (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 4.7A |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 2A, 10V |
Input Capacitance (Ciss) @ Vds | 350pF @ 30V |
Power - Max | 2W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 9.4nC @ 10V |
Package / Case | SST3 (SOT-23-3) |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT23; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PMV60EN,215 PMV60EN,215 568 2357 1 ND 56823571ND 568-2357-1 |