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PMGD8000LN,115

MOSFET N-CH TRENCH DL 30V

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SeekIC No. : 00147156 Detail

PMGD8000LN,115: MOSFET N-CH TRENCH DL 30V

PMGD8000LN,115 Data Sheet

floor Price/Ceiling Price

US $ .14~.25 / Piece | Get Latest Price
Part Number:
PMGD8000LN,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.25
  • $.21
  • $.18
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 0.125 A
Resistance Drain-Source RDS (on) : 8000 mOhms at 4 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-363 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 15 V
Configuration : Dual
Package / Case : SOT-363
Continuous Drain Current : 0.125 A
Resistance Drain-Source RDS (on) : 8000 mOhms at 4 V


Parameters:

Technical/Catalog InformationPMGD8000LN,115
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C125mA
Rds On (Max) @ Id, Vgs8 Ohm @ 10mA, 4V
Input Capacitance (Ciss) @ Vds 18.5pF @ 5V
Power - Max200mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs350pC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number568; SOT363; GV, GW; 6
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PMGD8000LN,115
PMGD8000LN,115
568 2370 1 ND
56823701ND
568-2370-1



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