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PMGD280UN,115

MOSFET N-CH TRENCH DL 20V

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SeekIC No. : 00156919 Detail

PMGD280UN,115: MOSFET N-CH TRENCH DL 20V

PMGD280UN,115 Data Sheet

floor Price/Ceiling Price

US $ .06~.07 / Piece | Get Latest Price
Part Number:
PMGD280UN,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~5900
  • 5900~10000
  • Unit Price
  • $.07
  • $.07
  • $.06
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 0.87 A
Resistance Drain-Source RDS (on) : 340 mOhms at 4.5 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-363 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SOT-363
Continuous Drain Current : 0.87 A
Resistance Drain-Source RDS (on) : 340 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationPMGD280UN,115
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C870mA
Rds On (Max) @ Id, Vgs340 mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) @ Vds 45pF @ 20V
Power - Max400mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs0.89nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number568; SOT363; GV, GW; 6
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PMGD280UN,115
PMGD280UN,115
568 2365 6 ND
56823656ND
568-2365-6



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