PMGD290XN,115, US $ .06-.08 , NXP Semiconductors, PMGD290XN,115 DataSheet download, circuit diagram from SeekIC.com

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PMGD290XN,115: MOSFET N-CH TRENCH DL 20V

PMGD290XN,115 Data Sheet

US $ .06~.08 / Piece | Get Latest Price

Part Number:: PMGD290XN,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	0.86 A
Resistance Drain-Source RDS (on) :	350 mOhms at 4.5 V	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-363	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SOT-363
Resistance Drain-Source RDS (on) : 350 mOhms at 4.5 V
Continuous Drain Current : 0.86 A

Parameters:

Technical/Catalog Information	PMGD290XN,115
Vendor	NXP Semiconductors (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	860mA
Rds On (Max) @ Id, Vgs	350 mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) @ Vds	34pF @ 20V
Power - Max	410mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	0.72nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Drawing Number	568; SOT363; GV, GW; 6
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PMGD290XN,115 PMGD290XN,115 568 2366 1 ND 56823661ND 568-2366-1

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