MOSFET N-CH TRENCH DL 60V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.49 A | ||
Resistance Drain-Source RDS (on) : | 920 mOhms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-363 | Packaging : | Reel |
Technical/Catalog Information | PMGD780SN,115 |
Vendor | NXP Semiconductors (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 490mA |
Rds On (Max) @ Id, Vgs | 920 mOhm @ 300mA, 10V |
Input Capacitance (Ciss) @ Vds | 23pF @ 30V |
Power - Max | 410mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 1.05nC @ 10V |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT363; GV, GW; 6 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PMGD780SN,115 PMGD780SN,115 568 2369 6 ND 56823696ND 568-2369-6 |