MOSFET N-CH TRENCH DL 30V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 0.71 A | ||
Resistance Drain-Source RDS (on) : | 480 mOhms at 4.5 V | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-363 | Packaging : | Reel |
Technical/Catalog Information | PMGD400UN,115 |
Vendor | NXP Semiconductors (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 710mA |
Rds On (Max) @ Id, Vgs | 480 mOhm @ 200mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 43pF @ 25V |
Power - Max | 410mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 0.89nC @ 4.5V |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT363; GV, GW; 6 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PMGD400UN,115 PMGD400UN,115 568 2368 1 ND 56823681ND 568-2368-1 |