PM45502C

Features: · Equipped with Power MOS FET· Low on-resistance· High speed switching· Low drive current· Wide area of safe operation· Inherent parallel diode between source and drain· Isolated base from Terminal· Suitable for motor driver, switching regulator and etc.Application·High Speed Power Switc...

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SeekIC No. : 004463629 Detail

PM45502C: Features: · Equipped with Power MOS FET· Low on-resistance· High speed switching· Low drive current· Wide area of safe operation· Inherent parallel diode between source and drain· Isolated base from...

floor Price/Ceiling Price

Part Number:
PM45502C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/23

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Product Details

Description



Features:

·  Equipped with Power MOS FET
·  Low on-resistance
·  High speed switching
·  Low drive current
·  Wide area of safe operation
·  Inherent parallel diode between source and drain
·  Isolated base from Terminal
·  Suitable for motor driver, switching regulator and etc.



Application

·High Speed Power Switching


Specifications

Item Symbol Rating Unit
Drain source voltage VDSS 450 V
Gate source voltage VGSS ±20 V
Drain current ID 50 A
Drain peak current ID(peak) 100 A
Body to drain diode reverse drain current IDR 50 A
Body to drain diode reverse drain peak current IDR(peak) 100 A
Channel dissipation Pch*1 300 W
Channel temperature Tch 150 °C
Storage temperature Tstg 45 to +125 °C
Insulation dielectric Visol*2 2000 V
Notes 1. Value at Tc = 25°C
          2. Base to terminals AC minute



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