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PM45302F

Features: · Equipped with Power MOS FET· Low on-resistance· High speed switching· Low drive current· Wide area of safe operation· Inherent parallel diode between source and drain· Isolated base from Terminal· Suitable for motor driver, switching regulator and etc.Application· High Speed Power Swit...

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PM45302F: Features: · Equipped with Power MOS FET· Low on-resistance· High speed switching· Low drive current· Wide area of safe operation· Inherent parallel diode between source and drain· Isolated base from...

PM45302F Data Sheet

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Part Number:
PM45302F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Equipped with Power MOS FET
· Low on-resistance
· High speed switching
· Low drive current
· Wide area of safe operation
· Inherent parallel diode between source and drain
· Isolated base from Terminal
· Suitable for motor driver, switching regulator and etc.




Application

· High Speed Power Switching




Specifications

Item
Symbol
Rating
Unit
Drain source voltage
V(BR)DSS
450
V
Gate source voltage
V(BR)GSS
±20
V
Drain current
ID
30
A
Drain peak current
ID(peak)
60
A
Body to drain diode reverse drain current
IDR
30
A
Body to drain diode reverse peak current
IDR(peak)
60
A
Channel dissipation
Pch*1
200
W
Channel temperature
Tch
150
Storage temperature
Tstg
45 to +125
Insulation dielectric
Viso*2
2000
V

Notes:
1. Value at Tc = 25
2. Base to terminals AC 1 minute




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