PIN-GaAs-2GHz

The PIN-GaAs-2GHz is a wide band low noise front-end amplifier for use in optical receivers. PIN-GaAs-2GHz uses a high speed InGaAs PIN photodiodes for detection over the long wavelength region from 1100 nm to 1550 nm.The following preamplifier uses GaAs MESFET technology for low noise performance. The transimpedance design of PIN-GaAs-2GHz is used to achieve a wide dynamic range for easy system configuration.It has many unique features: The first one is long wavelength. The second one is high speed capability. The third one is high detection sensitivity. The forth one is low noise GaAs MESFET technology. The fifth one is direct-coupled. The sixth one is 50 ohm interface.The seventh one is hermetically-sealed 14-pin butterfly package. The seventh one is -40 to 85 operation.

There are some absolute maximum ratings about PIN-GaAs-2GHz. Supply voltage(V_DD) is 0 V min, +5 V typ and +8 V max. Supply voltage(V_SS) is -5 V min, -3.5 V typ and 0 V max. Photodiode bias voltage(V_PD) is 0 V min, +5 V typ and +15 V max. Operating temperature is -40 min, 25 typ and 85 max. Storage temperature is -40min, 25 typ and +85 max. Otherwise, there are also some performance specifications about it.Bandwidth is 2 GHz typ. Electro-optical gain is 650 mV/mW typ. Output impedance is 50 ohms typ.Third order intermod distortion is -80 dBc typ.

Well, this is a simple introduction to PIN-GaAs-2GHz, if you want to know more about it, please pay more attention to our web. Thanks for your attention!