Features: SpecificationsDescriptionPIN-DD5 is made of two sandwiched PIN silicon photodetectors in which the bottom detector has a response that peaks at 1.06 um. The top element, while retaining sensitivity from reaching the lower element.The lower element thus acts as a 1.06 um Nd-Yag sensor. Th...
PIN-DD5: Features: SpecificationsDescriptionPIN-DD5 is made of two sandwiched PIN silicon photodetectors in which the bottom detector has a response that peaks at 1.06 um. The top element, while retaining se...
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Features: SpecificationsDescriptionThe PIN-GaAs-2GHz is a wide band low noise front-end amplifier ...
PIN-DD5 is made of two sandwiched PIN silicon photodetectors in which the bottom detector has a response that peaks at 1.06 um. The top element, while retaining sensitivity from reaching the lower element.The lower element thus acts as a 1.06 um Nd-Yag sensor. The combination of the two sensors serves as a low cost Nd-Yag-only or visible-spotting/Nd-Yag device.It can be applied to optical power meters,wavelength demultiplexers, two color temperature sensors, etc.The diameter of active area of each silicon chip is 0.100" and it is packaged with TO-5 can package.
There are some electrical characteristics about PIN-DD5.Peak responsivity is 0.20 A/W at 1060 nm(bottom detector for Nd-Yag). Shunt resistance per chip is larger than 100 M. Breakdown voltage is larger than 50 V when it is at 10 uA. Capacitance is smaller than 100pF when it is at 0 V.
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