Features: • 100,000 erase/write cycle Enhanced FLASH program memory typical• 1,000,000 erase/write cycle Data EEPROM memory• FLASH/Data EEPROM Retention: > 100 years• Power-on Reset (POR), Power-up Timer (PWRT) and Oscillator Start-up Timer (OST)• Programmable code...
PIC18FXX39: Features: • 100,000 erase/write cycle Enhanced FLASH program memory typical• 1,000,000 erase/write cycle Data EEPROM memory• FLASH/Data EEPROM Retention: > 100 years• Powe...
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SpecificationsDescriptionThe PIC1018SCL is one member of the PIC1018 family which is designed as o...
Ambient temperature under bias | -55 to +125 |
Storage temperature | -65 to +150 |
Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4) | -0.3V to (VDD + 0.3V) |
Voltage on VDD with respect to VSS | -0.3V to +7.5V |
Voltage onMCLRwith respect to VSS (Note 2) | 0V to +13.25V |
Voltage on RA4 with respect to Vss | 0V to +8.5V |
Total power dissipation (Note 1) | 1.0W |
Maximum current out of VSS pin | 300 mA |
Maximum current into VDD pin | 250 mA |
Input clamp current, IIK (VI < 0 or VI > VDD) | ±20 mA |
Output clamp current, IOK (VO < 0 or VO > VDD) | ±20 mA |
Maximum output current sunk by any I/O pin | 25 mA |
Maximum output current sourced by any I/O pin | 200 mA |
Maximum current sunk by PORTA, PORTB, and PORTE (Note 3) (combined) | 200 mA |
Maximum current sourced by PORTA, PORTB, and PORTE (Note 3) (combined) | 200 mA |
Maximum current sunk by PORTC and PORTD (Note 3) (combined) | 200 mA |
Maximum current sourced by PORTC and PORTD (Note 3) (combined) | 200 mA |