PHX20N06T,127

MOSFET N-CH 55V 12.9A SOT186A

product image

PHX20N06T,127 Picture
SeekIC No. : 003433193 Detail

PHX20N06T,127: MOSFET N-CH 55V 12.9A SOT186A

floor Price/Ceiling Price

Part Number:
PHX20N06T,127
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: TrenchMOS™ Manufacturer: NXP Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12.9A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 9.8nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 320pF @ 25V
Power - Max: 23W Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab Supplier Device Package: TO-220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Packaging: Tube
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Drain to Source Voltage (Vdss): 55V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds: 320pF @ 25V
Package / Case: TO-220-3 Isolated Tab
Power - Max: 23W
Gate Charge (Qg) @ Vgs: 9.8nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 12.9A


Parameters:

Technical/Catalog InformationPHX20N06T,127
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C12.9A
Rds On (Max) @ Id, Vgs75 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 320pF @ 25V
Power - Max23W
PackagingTube
Gate Charge (Qg) @ Vgs9.8nC @ 10V
Package / CaseTO-220-3 Full Pack
FET FeatureStandard
Drawing Number568; SOT186A; TO-220F; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PHX20N06T,127
PHX20N06T,127



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Soldering, Desoldering, Rework Products
Cable Assemblies
Test Equipment
View more