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PHX20N06T

MOSFET RAIL PWR-MOS

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SeekIC No. : 00161399 Detail

PHX20N06T: MOSFET RAIL PWR-MOS

PHX20N06T Data Sheet

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Part Number:
PHX20N06T
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12.9 A
Resistance Drain-Source RDS (on) : 0.138 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-220F
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.138 Ohms
Continuous Drain Current : 12.9 A


Features:

· Standard level compatible
· Isolated package.


Application

· DC motor control
· Synchronous rectification
· DC-to-DC converters
· General purpose power switching.


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25 °C Tj 150 °C
55
A
VDGR
drain-gate voltage (DC)
25 °C Tj 150 °C; RGS = 20 kW
55
A
VGS
gate-source voltage (DC)
±20
A
ID
drain current (DC)
Th = 25 °C; VGS = 10 V; Figure 2 and 3 [1]
12.9
V
Th = 100 °C; VGS = 10 V; Figure 2
8.1
V
IDM
peak drain current
Th = 25 °C; pulsed; tp   10 s; Figure 3 [1]
51.6
V
Ptot
total power dissipation
Th = 25 °C; Figure 1
23
W
Tstg
storage temperature
-55
+150
°C
Tj
junction temperature
-55
+150
°C
[1] External heatsink connected to mounting base


Description

PHX20N06T N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology.




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