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PHW80NQ10T,127

MOSFET N-CH TRENCH 100V 80A

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SeekIC No. : 00161853 Detail

PHW80NQ10T,127: MOSFET N-CH TRENCH 100V 80A

PHW80NQ10T,127 Data Sheet

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Part Number:
PHW80NQ10T,127
Mfg:
NXP Semiconductors
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.015 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.015 Ohms


Parameters:

Technical/Catalog InformationPHW80NQ10T,127
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs15 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 4720pF @ 25V
Power - Max263W
PackagingTube
Gate Charge (Qg) @ Vgs109nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number568; SOT429; ; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PHW80NQ10T,127
PHW80NQ10T,127



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