MOSFET N-CH TRENCH 100V 80A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
Resistance Drain-Source RDS (on) : | 0.015 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Rail |
PHW80NQ10T N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench'technology.