PHT4NQ10T,135

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.25 Ohms
Continuous Drain Current : 3.5 A
Configuration : Single Dual Drain
Package / Case : SC-73


Parameters:

Technical/Catalog Information	PHT4NQ10T,135
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	3.5A
Rds On (Max) @ Id, Vgs	250 mOhm @ 1.75A, 10V
Input Capacitance (Ciss) @ Vds	300pF @ 25V
Power - Max	6.9W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7.4nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Drawing Number	568; SOT223; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHT4NQ10T,135 PHT4NQ10T,135