PHT4N10T

PHT4N10T N-channel enchancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage,fast switching and high thermal cycling performance. Intended for use in compact fluroescent lights(CFL)and general purpose switching applications.It has six unique features: the first one is "Trench" technology. The second one is low on-state resistance. The third one is fast switching. The forth one is stable off-state charactersitics. The fifth one is high thermal cycling performance. The sixth one is low thermal resistance.

There are some limiting values(limiting values in accordance with the absolute maximum system) of PHT4N10T.Drain-source voltage(V_DSS) is 100 V max when Tj is 25 to 175.Drain-gate voltage(V_DGR) is 100 V when Tj is 25 to 175,RGS is 20 k. Gate-source voltage is ±20 V. Continuous drian current(DC)(I_D) is 3.5 A when Tsp is 25 or is 2.2 A when Tsp is 100.Drain current(pulse peak value)(IDM) is 2.2 A when Tsp is 25.Total power dissipation(Ptot) is 8.3 W when Tsp is 25. Junction temperature(Tj) is 150.Otherwise, there are also some thermal resistances about it.Thermal resistance junction to solder point is 12 k/W typ and 15 k/W max. Thermal resistance junction to ambient is 70 K/W typ (pcb mounted;minimum footprint).Electrical characteristics: Drain-source breakdwon voltage(V(BR)DSS) is 100 V min when VGS is 0V, ID is 0.25 mA. Gate threshold voltage (V_GS(TO) ) is 2.0 Vmin,3.0 V typ and 4.0 V max when VDS is VGS, ID is 1 mA. Drain-source leakage current(I_DSS) is 1uA typ and 100 uA max when V_DS is 500 V , V_GS is 0 V, Tj is 25.Gate-source leakage current(I_GSS) is 10 nA typ and 100 nA max when V_GS is ±10 V,V_DS is 0 V.Drain-source on-state resistance(R_DS(ON) ) is 250 mtyp and 300 m max when VGS is 10 V , I_D is 1.75 A. Forward transconductance(gfs) is 0.5 S min and 2 S typ when V_DS is 25 V and I_D is 1.75 A. Input capacitance(Ciss) is 350 pF typ  when V_GS is 0 V , V_DS is 25 V and f is 1 MHz.Feedback capacitance(Crss) is 30 pF typ when VGS is 0 V , V_DS is 25 V and f is 1 MHz.Total gate charge is 10 nC typ and 13 nC max when V_DD is 80 V , V_GS is 10 V,I_D is 3.5 A .Gate to source charge is 2 nC typ and 3 nC max when  V_DD is 80 V , VGS is 10 V,ID is 3.5 A .

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