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PHT4NQ10T

Features: · TrenchMOS™ technology· Very fast switching· Surface mount package.Application· Primary side switch in DC to DC converters· High speed line driver· Fast general purpose switch.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =...

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SeekIC No. : 004460717 Detail

PHT4NQ10T: Features: · TrenchMOS™ technology· Very fast switching· Surface mount package.Application· Primary side switch in DC to DC converters· High speed line driver· Fast general purpose switch.Speci...

PHT4NQ10T Data Sheet

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Part Number:
PHT4NQ10T
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· TrenchMOS™ technology
· Very fast switching
· Surface mount package.


Application

· Primary side switch in DC to DC converters
· High speed line driver
· Fast general purpose switch.


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C - 100 V
VDGR drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 k - 100 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 - 3.5 A
Tsp = 100 °C; VGS = 10 V; Figure 2 - 2.2 A
IDM peak drain current Tsp = 25 °C; pulsed; tp 10 s; Figure 3 - 14 A
Ptot total power dissipation Tsp = 25 °C; Figure 1   6.9 W
Tstg storage temperature   -65 +150 °C
Tj operating junction temperature   -65 +150 °C
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C; - 3.5 A
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10 s - 14 A
Avalanche ruggedness
EAS non-repetitive avalanche energy unclamped inductive load; ID = 3.5 A; tp = 0.2 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 °C; Figure 4 - 45 mJ
IAS non-repetitive avalanche current unclamped inductive load; VDD 15 V; RGS = 50 ; VGS = 10 V; Figure 4 - 3.5 A



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability:
   PHT4NQ10T in SOT223.


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