PHP78NQ03LT

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.009 Ohms


Features:

·n Logic level threshold

· Fast switching

Application

·n Computer motherboards

·n DC-to-DC converters

Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage	25 Tj 175	-	25	V
VDGR	drain-gate voltage	25 Tj 175 ; RGS = 20 k	-	25	V
VGS	gate-source voltage		-	±20	V
ID	drain current	Tmb = 25 ; VGS = 5 V; Figure 2 and 3	-	61	A
		Tmb = 100 ; VGS = 5 V; Figure 2	-	43	A
		Tmb = 25 ; VGS = 10 V	-	75	A
		Tmb = 100 ; VGS = 10 V	-	53	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 ms; Figure 3	-	228	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	93	W
Tstg	storage temperature		-55	+175
Tj	junction temperature		-55	+175
Source-drain diode
IS	source (diode forward) current	Tmb = 25	-	75	A
ISM	peak source (diode forward) current	Tmb = 25 ; pulsed; tp 10 s	-	228	A
Avalanche ruggedness
EDS(AL)S	non-repetitive drain-source avalanche energy	unclamped inductive load; ID = 43 A;tp = 0.25 s; VDD 25 V; RGS = 50 W;VGS = 10 V; starting at Tj = 25	-	185	mJ

Description

PHP78NQ03LT Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.