PHP71NQ03LT

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

·Logic level compatible
· Low gate charge


Application

·DC to DC converters
· Switched mode power supplies


Specifications

Symbol	Parameter	Conditions	Min Unit	Max	Unit
VDS	drain-source voltage (DC)	25 °C Tj 175 °C	-	30	V
VDGR	drain-gate voltage (DC)	25 °C Tj 175 °C; RGS = 20 kW	-	30	V
VGS	gate-source voltage (DC)		-	±20	V
ID	drain current (DC)	Tmb = 25 °C; VGS = 10 V; Figure 2 and 3	-	±25	A
		Tmb = 100 °C; VGS = 10 V; Figure 2	-	75	A
IDM	peak drain current	Tmb = 25 °C; pulsed; tp 10 ms; Figure 3	-	240	A
Ptot	total power dissipation	Tmb = 25 °C; Figure 1	-	250	W
Tstg	storage temperature		-55	+175	°C
Tj	junction temperature		-55	+175	°C

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:
PHP71NQ03LT in SOT78 (TO-220AB)
PHB71NQ03LT in SOT404 (D2-PAK)
PHD71NQ03LT in SOT428 (D-PAK).