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PHN708

Features: · High-speed switching· No secondary breakdown· Very low on-state resistance.Application· High-speed switching· No secondary breakdown· Very low on-state resistance.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per FET VDS drain-source voltage (DC) - 30 ...

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SeekIC No. : 004460565 Detail

PHN708: Features: · High-speed switching· No secondary breakdown· Very low on-state resistance.Application· High-speed switching· No secondary breakdown· Very low on-state resistance.Specifications SYM...

PHN708 Data Sheet

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Part Number:
PHN708
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· High-speed switching
· No secondary breakdown
· Very low on-state resistance.


Application

· High-speed switching
· No secondary breakdown
· Very low on-state resistance.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per FET
VDS drain-source voltage (DC)   - 30 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Ts = 80 °C; note 1 - 3.1 A
IDM peak drain current note 2 - 12.4 A
Ptot total power dissipation Ts = 80 ; note 3 - 1.3 W
Ts = 80 ; note 4 - 1.13 W
Ts = 80 ; note 5 - 0.92 W
Ts = 80 ; note 6 - 0.77 W
Tstg storage temperature   -55 +150
Tj operating junction temperature   -55 150
Source-drain diode
IS source current (DC) Ts = 80 - 1.3 A
ISM peak source current note 2 - 5.2 A



Description

Seven enhancement mode MOS transistors in a 24-pin plastic SOT340-1 (SSOP24) package. Six of the transistors PHN708 are in three half-bridge configurations.




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