PHN70308

Features: • 30 mW isolation transistor• 80 mW spindle transistors • TrenchMOS technology• Logic level compatible • Surface mount packageApplicationThese products are not designed for use in life support appliances, devices or systems where malfunction of these product...

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SeekIC No. : 004460564 Detail

PHN70308: Features: • 30 mW isolation transistor• 80 mW spindle transistors • TrenchMOS technology• Logic level compatible • Surface mount packageApplicationThese products are no...

floor Price/Ceiling Price

Part Number:
PHN70308
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/25

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Product Details

Description



Features:

• 30 mW isolation transistor
• 80 mW spindle transistors
• TrenchMOS technology
• Logic level compatible
• Surface mount package



Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj = 25 °C to 150°C - 25 V
VDGR Drain-gate voltage RGS = 20 k - 25 V
VGS Gate-source voltage   - ± 20 V
ID Peak drain current per device (continuous operation) Tsp = 50 °C spindle FETs; = 33.3% Isolation FET (dc) - 5 5 A A
IDM Peak current per device (pulse peak value) spindle FETs isolation FET - 20 20 A A
Ptot Power dissipation per device2 Tsp = 50 °C spindle FETs; = 33.3% isolation FET (dc)   1.13 1.275 W W
Ptot Total power dissipation in normal operation2 Tsp = 50 °C spindle FETs; = 33.3% isolation FET (dc) - 8 W
Tstg,Tj Storage & operating temperature   -55 150 °C



Description

This PHN70308 product is used to drive high performance, three phase brushless d.c. motors in computer disk drives.

The PHN70308 contains seven, n-channel enhancement mode trenchMOS transistors in a surface mounting plastic package. Six of the transistors can be configured as a three phase bridge to drive the spindle of a disk drive motor. The remaining transistor delivers power to the three phase bridge during normal operation. In the event of a power failure occurring whilst the motor is still spinning, this transistor isolates the computer power supply from the back emf generated by the motor.

The PHN70308 is supplied in the surface mounting SOT341-1 (SSOP28) package.




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