PHN210T

Features: • Dual device• Low threshold voltage• Fast switching• Logic level compatible• Surface mount packageApplication• Motor and relay drivers• d.c. to d.c. converters• Logic level translatorPinoutSpecifications SYMBOL PARAMETER CONDI...

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PHN210T Picture
SeekIC No. : 004460561 Detail

PHN210T: Features: • Dual device• Low threshold voltage• Fast switching• Logic level compatible• Surface mount packageApplication• Motor and relay drivers• d.c. to d...

floor Price/Ceiling Price

Part Number:
PHN210T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Dual device
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package



Application

• Motor and relay drivers
• d.c. to d.c. converters
• Logic level translator



Pinout

  Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MIN.
UNIT
VDS
Repetitive peak drain-source voltage
Tj = 25 °C to 150°C
-
30
V
VDS
Continuous drain-source voltage
-
30
V
VDGR
Drain-gate voltage
RGS = 20 k
-
30
V
VGS
Gate-source voltage
-
±20
V
ID
Drain current per MOSFET1
Ta = 25 °C
-
3.4
A
Ta = 70 °C
-
2.8
A
ID
Drain current per MOSFET (both MOSFETs conducting)1
Ta = 25 °C
-
2.4
A
Ta = 70 °C
-

1.9

A
IDM
Drain current per MOSFET (pulse peak value)
Ta = 25 °C
-
14
A
-
2
W
Ptot
Total power dissipation (either or both MOSFETs conducting)1
Ta = 25 °C
-
1.3
W
Tstg,Tj
Storage & operating temperature
Ta = 70 °C
-65
150
°C



Description

PHN210T, Dual N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench'technology.


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