Features: • Dual device• Low threshold voltage• Fast switching• Logic level compatible• Surface mount packageApplication• Motor and relay drivers• d.c. to d.c. converters• Logic level translatorPinoutSpecifications SYMBOL PARAMETER CONDI...
PHN210T: Features: • Dual device• Low threshold voltage• Fast switching• Logic level compatible• Surface mount packageApplication• Motor and relay drivers• d.c. to d...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MIN. |
UNIT |
VDS |
Repetitive peak drain-source voltage |
Tj = 25 °C to 150°C |
- |
30 |
V |
VDS |
Continuous drain-source voltage |
- |
30 |
V | |
VDGR |
Drain-gate voltage |
RGS = 20 k |
- |
30 |
V |
VGS |
Gate-source voltage |
- |
±20 |
V | |
ID
|
Drain current per MOSFET1 |
Ta = 25 °C |
- |
3.4 |
A |
Ta = 70 °C |
- |
2.8 |
A | ||
ID
|
Drain current per MOSFET (both MOSFETs conducting)1 |
Ta = 25 °C |
- |
2.4 |
A |
Ta = 70 °C |
- |
1.9 |
A | ||
IDM
|
Drain current per MOSFET (pulse peak value) |
Ta = 25 °C |
- |
14 |
A |
- |
2 |
W | |||
Ptot |
Total power dissipation (either or both MOSFETs conducting)1 |
Ta = 25 °C |
- |
1.3 |
W |
Tstg,Tj |
Storage & operating temperature |
Ta = 70 °C |
-65 |
150 |
°C |