Features: • Dual device • Low threshold voltage• Fast switching • Logic level compatible• Surface mount packageApplicationThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expec...
PHN203: Features: • Dual device • Low threshold voltage• Fast switching • Logic level compatible• Surface mount packageApplicationThese products are not designed for use in lif...
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These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Repetitive peak drain-source voltage | Tj = 25 to 150 | - | 25 | V |
VDS | Continuous drain-source voltage | - | 25 | V | |
VDGR | Drain-gate voltage | RGS = 20 kW | - | 25 | V |
VGS | Gate-source voltage | - | ± 20 | V | |
ID | Drain current per MOSFET1 |
Ta = 25 Ta = 70 |
- | 6.3 5 | A A |
ID | Drain current per MOSFET (both MOSFETs conducting)1 | Ta = 25 Ta = 70 | - | 4.4 3.5 | A A |
IDM | Drain current per MOSFET (pulse peak value) | Ta = 25 | - | 25 | A |
Ptot | Total power dissipation (either or both MOSFETs conducting)1 | Ta = 25 Ta = 70 | - | 2 1.3 | w w |
Tstg, Tj | Storage & operating temperature | -55 | 150 |
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The PHN203 has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHN203 is supplied in the SOT96-1 (SO8) surface mounting package.